?2005 fairchild semiconductor corporation 1 www.fairchildsemi.com fdp55n06/FDPF55N06 rev. a fdp55n06/FDPF55N06 60v n-channel mosfet unifet tm fdp55n06/FDPF55N06 60v n-channel mosfet features ? 55a, 60v, r ds(on) = 0.022 ? @v gs = 10 v ? low gate charge ( typical 30 nc) ? low crss ( typical 60 pf) ?fast switching ? 100% avalanche tested ? improved dv/dt capability description these n-channel enhancement mode power field effect transistors are produced using fa irchild?s proprietary, planar stripe, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficient switched mode power s upplies, active power factor correction, electronic lamp ballast based on half bridge topology. to-220 fdp series g s d to-220f fdpf series g s d d g s absolute maximum ratings t c = 25c unless otherwise noted * drain current limited by maximum junction temperature thermal characteristics symbol parameter fdp55n06 FDPF55N06 units v dss drain-source voltage 60 v i d drain current - continuous (t c = 25c) 55 55 * a - continuous (t c = 100c) 34.8 34.8 * a i dm drain current - pulsed (note 1) 220 220 * a v gss gate-source voltage 25 v e as single pulsed avalanche energy (note 2) 480 mj i ar avalanche current (note 1) 55 a e ar repetitive avalanche energy (note 1) 11.4 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25c) 114 48 w - derate above 25c 0.9 0.4 w/c t j , t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purposes, 1/8 ? from case for 5 seconds 300 c symbol parameter fdp55n06 FDPF55N06 units r jc thermal resistance, junction-to-case 1.1 2.58 c / w r js thermal resistance, case-to-sink typ. 0.5 -- c / w r ja thermal resistance, junction-to-ambient 62.5 62.5 c / w
2 www.fairchildsemi.com fdp55n06/FDPF55N06 rev. a fdp55n06/FDPF55N06 60v n-channel mosfet package marking and ordering information device marking device package reel size tape width quantity fdp55n06 fdp55n06 to-220 50 FDPF55N06 FDPF55N06 to-220f 50 electrical characteristics t c = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 60 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c -- 0.05 -- v/c i dss zero gate voltage drain current v ds = 60 v, v gs = 0 v -- -- 1 a v ds = 48 v, t c = 150c -- -- 10 a i gssf gate-body leakage current, forward v gs = 20 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -20 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2.0 -- 4.0 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 27.5 a -- 0.018 0.022 ? g fs forward transconductance v ds = 25 v, i d = 27.5 a (note 4) -- 33 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 1160 1510 pf c oss output capacitance -- 375 490 pf c rss reverse transfer capacitance -- 60 90 pf switching characteristics t d(on) turn-on delay time v dd = 30 v, i d = 55 a, r g = 25 ? (note 4, 5) -- 30 65 ns t r turn-on rise time -- 130 265 ns t d(off) turn-off delay time -- 70 150 ns t f turn-off fall time -- 95 195 ns q g total gate charge v ds = 48 v, i d = 55a, v gs = 10 v (note 4, 5) -- 30 37 nc q gs gate-source charge -- 6.5 -- nc q gd gate-drain charge -- 7.5 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 55 a i sm maximum pulsed drain-source diode forward current -- -- 220 a v sd drain-source diode forward voltage v gs = 0 v, i s = 55 a -- -- 1.4 v t rr reverse recovery time v gs = 0 v, i s = 55 a, di f / dt = 100 a/ s (note 4) -- 40 -- ns q rr reverse recovery charge -- 55 -- c notes: 1. repetitive rating : pulse width limited by maximum junction temperature 2. l = 5.6mh, i as = 55a, v dd = 50v, r g = 25 ?, starting t j = 25c 3. i sd 55a, di/dt 200a/ s, v dd bv dss, starting t j = 25c 4. pulse test : pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature
3 www.fairchildsemi.com fdp55n06/FDPF55N06 rev. a fdp55n06/FDPF55N06 60v n-channel mosfet typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics 10 -1 10 0 10 1 10 0 10 1 10 2 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v 5.0 v bottom : 4.5 v * notes : 1. 250 s pulse test 2. t c = 25 o c i d , drain current [a] v ds , drain-source voltage [v] 246810 10 0 10 1 10 2 150 o c 25 o c -55 o c * notes : 1. v ds = 30v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] figure 3. on-resistance variation vs . figure 4. body diode forward voltage drain current and gate voltage variation vs. source current and temperatue 0 25 50 75 100 125 150 175 200 0.02 0.03 0.04 0.05 v gs = 20v v gs = 10v * note : t j = 25 o c r ds(on) [o ], drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10 0 10 1 10 2 150 o c * notes : 1. v gs = 0v 2. 250 s pulse test 25 o c i dr , reverse drain current [a] v sd , source-drain voltage [v] figure 5. capacitance characteristics figure 6. gate charge characteristics 10 -1 10 0 10 1 0 500 1000 1500 2000 2500 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd * note : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitances [pf] v ds , drain-source voltage [v] 0 5 10 15 20 25 30 0 2 4 6 8 10 12 v ds = 30v v ds = 48v * note : i d = 55a v gs , gate-source voltage [v] q g , total gate charge [nc]
4 www.fairchildsemi.com fdp55n06/FDPF55N06 rev. a fdp55n06/FDPF55N06 60v n-channel mosfet typical performance characteristics (continued) figure 7. breakdown voltage variat ion figure 8. on-resistance variation vs. temperature vs. temperature -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 * notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 * notes : 1. v gs = 10 v 2. i d = 27.5 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] figure 9-1. maximum safe operating area figure 9-2. maximum safe operating area for fdp55n06 for FDPF55N06 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 10 2 10 3 1 ms 10 s dc 10 ms 100 s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 10 2 10 3 100 ms 1 ms 10 s dc 10 ms 100 s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] figure 10. maximum drain current vs. case temperature 25 50 75 100 125 150 0 10 20 30 40 50 60 i d , drain current [a] t c , case temperature [ o c]
5 www.fairchildsemi.com fdp55n06/FDPF55N06 rev. a fdp55n06/FDPF55N06 60v n-channel mosfet typical performance characteristics (continued) figure 11-1. transient thermal response curve for fdp55n06 figure 11-2. transient thermal response curve for FDPF55N06 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * notes : 1. z ?jc (t) = 1.1 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z ?jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z ?jc (t), thermal response t 1 , square w ave pulse duration [sec] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * notes : 1. z ?jc (t) = 2.58 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z ?jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z ?jc (t), thermal response t 1 , square w ave pulse duration [sec]
gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms 6 www.fairchildsemi.com fdp55n06/FDPF55N06 rev. a fdp55n06/FDPF55N06 60v n-channel mosfet
peak diode recovery dv/dt test circuit & waveforms 7 www.fairchildsemi.com fdp55n06/FDPF55N06 rev. a fdp55n06/FDPF55N06 60v n-channel mosfet
4.50 0.20 9.90 0.20 1.52 0.10 0.80 0.10 2.40 0.20 10.00 0.20 1.27 0.10 ?3.60 0.10 (8.70) 2.80 0.10 15.90 0.20 10.08 0.30 18.95max. (1.70) (3.70) (3.00) (1.46) (1.00) (45 ) 9.20 0.20 13.08 0.20 1.30 0.10 1.30 +0.10 ?0.05 0.50 +0.10 ?0.05 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] to-220 8 www.fairchildsemi.com fdp55n06/FDPF55N06 rev. a fdp55n06/FDPF55N06 60v n-channel mosfet
9 www.fairchildsemi.com fdp55n06/FDPF55N06 rev. a fdp55n06/FDPF55N06 60v n-channel mosfet mechanical dimensions (7.00) (0.70) max1.47 (30 ) #1 3.30 0.10 15.80 0.20 15.87 0.20 6.68 0.20 9.75 0.30 4.70 0.20 10.16 0.20 (1.00x45 ) 2.54 0.20 0.80 0.10 9.40 0.20 2.76 0.20 0.35 0.10 ?3.18 0.10 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] 0.50 +0.10 ?0.05 to-220f
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